A novel technique to obtain a-Si:H films by a dual ion-beam sputtering (DIBS) system is described. A beam of argon is used to sputter silicon, while a beam of hydrogen impinges directly onto the growing film. The system has proven to be very efficient in the control of growth parameters. Hydrogen incorporation can be remarkably affected by varying the energy of the H ions. IR spectra indicate that, when the energy is raised from 80 to 800 eV, the density of isolated SiH clusters in the material increases relative to SiH. The samples obtained exhibit promising optical and electrical properties. The optical energy gap is typically 1.7 eV and the room temperature conductivity is in the range 10-9-10-11(ωcm)-1. Photoconductivity values of 10-9(ω cm)-1 are obtained. © 1983.

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